[1] S.-K. Su, E.Chen, A. Sanchez-Soares, T. Kelly, G. Fagas, J.C. Greer, G. Pitner, H.-S. Philip Wong, I.P. Radu. “Effect of Metal Coupling on Schottky Barrier Height Extraction”. SISPAD 2023. [ IEEE Xplore]

 

[2] A. Sanchez-Soares, C. Gilardi, Q. Lin, T. Kelly, S.-K. Su, G. Fagas, J.C. Greer, G. Pitner, E.Chen. “Switching Limits of Top-Gated Carbon Nanotube Field-Effect Transistors”. Solid-State Electronics 2023. [ ScienceDirect ]

 

[3] S.-K. Su, A. Sanchez-Soares, E. Chen, T. Kelly, G. Fagas, J.C. Greer, G. Pitner, H.-S. Philip Wong, I.P. Radu. “Impact of Metal Hybridization on Contact Resistance and Leakage Current of Carbon Nanotube Transistors”. IEEE Electron Device Letters 2022. [ IEEE Xplore ]

 

[4] Q. Lin, G. Pitner, C. Gilardi, S.-K. Su, Z. Zhang, E. Chen P. Bandaru, A. Kummel, H. Wang, M. Passlack, S. Mitra, H.-S. Phillip Wong. “Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs”. IEEE Electron Device Letters. 2021. [ IEEE Xplore ]

 

[5] E. Chen, A. Sanchez-Soares, T. Kelly, G. Fagas, and J. Greer. “A Sub-k B T/q Dirac-source Graphene Nanoribbon Field-effect Transistor”. SISPAD 2021. [ IEEE Xplore ]

 

[6] “Simulations of Gate-All-Around Silicon Nanowire FETs: Comparison with Experiments”. 2021. [ResearchGate]

 

[7] A. Sanchez-Soares, T. Kelly, G. Fagas, J. Greer, and E. Chen, “Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments”. VLSI-TSA 2021. [IEEE Xplore | arXiv]