TCAD for designing the future

M* (pronounced \ɛm – ˈstar\)

For ultra scaled devices such as finFETs, nanowire or thin film transistors, for devices relying on 2DEG or 2DHG such as HEMTs, for tunneling, 2D  and quantum confinement transistors, explicit quantum mechanical simulation is essential.

M* is the world leading TCAD solution for explicit quantum simulations.

M* is easy to use, fast, robust and flexible, making it the ideal tool for advance technology design.

A new fully-integrated GUI lets you prepare, run, and analyse simulations quickly and conveniently.

A set of detailed tutorials will walk you through all the latest features and capabilities:

Silicon Nanowire
Germanium FinFET

P-type Planar FET
III-V Nanosheet FET

Scattering in a Silicon Nanowire

Contact us for your TCAD requirements.